Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

摘要

Single-layer graphene structures and devices are commonly defined usingreactive ion etching and plasma etching with O2 or Ar as the gaseous etchants.Although optical microscopy and Raman spectroscopy are widely used to determinethe appropriate duration of dry etching, additional characterization withatomic force microscopy (AFM) reveals that residual graphene and/or etchingbyproducts persist beyond the point where the aforementioned methods suggestcomplete graphene etching. Recognizing that incomplete etching may havedeleterious effects on devices and/or downstream processing, AFMcharacterization is used here to determine optimal etching conditions thateliminate graphene dry etching residues.